International Journal For Multidisciplinary Research

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High Field Confinement Enhancement in Silicon-based Photonic Crystal with Different Point Defects

Author(s) Ferdousi Mayoa, Mehedi Hasan
Country Bangladesh
Abstract Two-dimensional silicon-based photonic crystals as optical analogs to electronic semiconductors are presented in this paper, emphasizing the design and analysis of two-dimensional structures. Employing the Lumerical FDTD solver, we initially crafted defect-free photonic crystals within a hexagonal lattice of air holes on a silicon slab (6.57 μm along x, 6.57 μm along y, 0.75 μm along z). The lattice parameters (a = 0.365 μm, r = 0.1095 μm, with r = 0.3a) established a target resonant wavelength of 1.5 μm. Utilizing Finite Difference Time-Domain (FDTD), we evaluated electric field decay, resonant modes, and the Q factor. The defect-free structure exhibited a peak Q factor of 736.004 at a resonant wavelength of 1262.87 nm. Removal of a central hole enhanced the Q factor to 1286.96 at 1391.07 nm. Introducing various line defects, the structure with three holes removed from vertical positions emerged as the optimal candidate for silicon-based photonic crystal cavity resonators, displaying the highest Q factor near the target resonant wavelength. Additionally, the structure with seven holes removed showed stable linear decays at both resonant wavelengths, suggesting its potential as a cavity resonator design candidate.
Keywords Photonic Crystal, Silicon Slab, Crystal Defect, FDTD, Field Confinement
Field Physics > Electric
Published In Volume 6, Issue 1, January-February 2024
Published On 2024-01-13
Cite This High Field Confinement Enhancement in Silicon-based Photonic Crystal with Different Point Defects - Ferdousi Mayoa, Mehedi Hasan - IJFMR Volume 6, Issue 1, January-February 2024. DOI 10.36948/ijfmr.2024.v06i01.11888
DOI https://doi.org/10.36948/ijfmr.2024.v06i01.11888
Short DOI https://doi.org/gtdr42
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