International Journal For Multidisciplinary Research

E-ISSN: 2582-2160   •   Impact Factor: 9.24

A Widely Indexed Open Access Peer Reviewed Multidisciplinary Bi-monthly Scholarly International Journal

Call for Paper Volume 6 Issue 6 November-December 2024 Submit your research before last 3 days of December to publish your research paper in the issue of November-December.
Submit Research Paper Join as a Reviewer

Plagiarism is checked by the leading plagiarism checker TurnItIn

Call for Paper

Volume 6 Issue 6
November-December 2024

Submit your research paper

Indexing Partners
Academia Advanced Sciences Index Bielefeld Academic Search Engine CiteSeer DRJI Google Scholar Independent Search Engine & Directory Network ISI (International Scientific Indexing) Issuu Mendeley Research Networks
RefSeek ResearcherId - Thomson Reuters ResearchGate Scirus Scribd Semantic Scholar UTeM - Universiti Teknikal Malaysia Melaka Wiki for Call for Papers WorldCat Zenodo

Microstructural and Current-voltage Characteristics in Mo/HfO2/n‑Si Based Metal-Insulator-Semiconductor (MIS) Diode using Different Methods for Optoelectronic Device Applications

Author(s) G. Nagaraju, N.V. Srihari, M. Vani, R. Jaya Madhuri, V. Manjunath, M. Renuka, B. Rajitha, Saripiralla Basamma, S. Himagirish Kumar, P. R. Sekhar Reddy
Country India
Abstract This paper investigates the effect of hafnium dioxide (HfO2) thin film as interlayer between the Mo and n-Si semiconductor on the electrical characteristics of the Mo/n-Si Schottky diode (SD). The X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD) results confirmed that HfO2 films were formed on the n-Si semiconductors. The image from SEM and AFM displays that the deposited HfO2 thin film had a uniform appearance good smoothness of the surface. The smooth surfaces of the insulating layer strongly influence the electrical properties of the diode. The electrical properties of the Mo/HfO2/n-Si metal/insulator/semiconductor (MIS) diode were obtained via current-voltage (I-V) measurements in the voltage range from −3 V to +3 V at room temperature. A better rectifying ability and a reduced reverse leakage current were demonstrated by the MIS diode. The MIS dide's barrier height (Bh) and ideality factor value were calculated to be 0.85 eV and 1.21, respectively. The MIS diode was able to achieve a higher b, which allowed the HfO2 interlayer to change BH. The calculated BH values from the I-V, Hernandez, Cheung, and Norde approaches were comparable to one another, demonstrating their validity and consistency. The MIS diode's forward bias log (I) - log (V) curve demonstrated that it was ohmic in low-voltage regimes and that conduction was space-charge-limited in high-voltage regimes. However, for the MIS diode, the Poole-Frenkel and Schottky emissions are the dominant current conduction mechanisms in the lower and higher bias regions. These outcomes indicate that the HfO2 film can be chosen as dielectric materials in the construction of MIS devices.
Keywords High-k HfO2, n-type Si, MIS diode, structural and electrical properties.
Field Physics > Electric
Published In Volume 6, Issue 2, March-April 2024
Published On 2024-04-01
Cite This Microstructural and Current-voltage Characteristics in Mo/HfO2/n‑Si Based Metal-Insulator-Semiconductor (MIS) Diode using Different Methods for Optoelectronic Device Applications - G. Nagaraju, N.V. Srihari, M. Vani, R. Jaya Madhuri, V. Manjunath, M. Renuka, B. Rajitha, Saripiralla Basamma, S. Himagirish Kumar, P. R. Sekhar Reddy - IJFMR Volume 6, Issue 2, March-April 2024. DOI 10.36948/ijfmr.2024.v06i02.16012
DOI https://doi.org/10.36948/ijfmr.2024.v06i02.16012
Short DOI https://doi.org/gtpw8b
View / Download PDF File

Share this



E-ISSN 2582-2160
CrossRef

CrossRef DOI is assigned to each research paper published in our journal.

IJFMR DOI prefix is
10.36948/ijfmr

Downloads
Research Paper Format Copyright Permission Form and Undertaking Form Cover Page Vol 6 Isu 6Cover Page Vol 6 Isu 5Cover Page Vol 6 Isu 4

All research papers published on this website are licensed under Creative Commons Attribution-ShareAlike 4.0 International License, and all rights belong to their respective authors/researchers.

CC-BY-SA Open Access

About IJFMR
Fees & Payment
Current Issue
Publication Archive 		Submit Research Paper
Track Submission Status
Publication Guidelines
Publication Ethics
Peer Review & Plagiarism 		Join as a Reviewer
Editors & Reviewers
Reviewer Referral Program
Get Reviewer Membership Certi. 		Website/Journal Policies
Usage Policy
Content Policies
Privacy Policy
Contact Us +91-9898-5948-55 editor@ijfmr.com