Small Signal Equivalent Circuit Model of MESFET with Effect of Transmission Line

Author(s)	Rashmita Kumari Panigrahy
Country	India
Abstract	For the design of Integrated Circuit GaAs MESFET is Suitable by considering the transmission line character of the gate length at high frequencies. In the conducting channel, a stationary high field domain under saturation current condition. Small signal equivalent circuit of the channel is derived and equivalent circuit has been optimized by simulating average S-parameters for the process calculated between 1-65GHZ and 150 nm gate length of the device.
Keywords	Transmission line, MESFET, Small signal equivalent circuit, S-Parameters
Field	Engineering
Published In	Volume 5, Issue 2, March-April 2023
Published On	2023-04-16
Cite This	Small Signal Equivalent Circuit Model of MESFET with Effect of Transmission Line - Rashmita Kumari Panigrahy - IJFMR Volume 5, Issue 2, March-April 2023. DOI 10.36948/ijfmr.2023.v05i02.2409
DOI	https://doi.org/10.36948/ijfmr.2023.v05i02.2409
Short DOI	https://doi.org/gr5qt8

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