TCAD RF Performance Investigation of V-Shaped Groove Gate MOSFET

Author(s)	Priyanka Malik, Pooja Devi, Nisha Malik, Narendra Singh
Country	India
Abstract	For the first time, the RF performance analysis of a V-shaped grooved (V-GG) Gate MOSFET has been presented and compared with the trapezoidal groove gate (TGG) and rectangular groove gate (RGG) MOSFETs, using ATLAS-3D device simulator, for future wireless and ULSI applications. The study reveals that V-GG MOSFET exhibits significantly enhanced performance as compared to its conventional counterparts in terms of the figure of merits (FOM): drain current, transconductance (gm), cut-off frequency (ft), maximum transducer power gain, stern stability factor (K), and, S-parameters.
Keywords	MOSFET, V-shaped grooved gate, RF applications
Field	Physics > Electric
Published In	Volume 5, Issue 2, March-April 2023
Published On	2023-04-18
Cite This	TCAD RF Performance Investigation of V-Shaped Groove Gate MOSFET - Priyanka Malik, Pooja Devi, Nisha Malik, Narendra Singh - IJFMR Volume 5, Issue 2, March-April 2023. DOI 10.36948/ijfmr.2023.v05i02.2477
DOI	https://doi.org/10.36948/ijfmr.2023.v05i02.2477
Short DOI	https://doi.org/gr5qsv

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