Wave Interaction in Two Species Ion-implanted Semi-conductor Plasma

Author(s)	Dr. C. S. Sharma, Dr. Nishchhal Yadav, Dr. K. Jain
Country	India
Abstract	The present paper is aimed to report the analytical study of wave interaction in two species (InSb, GaAs) ion implanted semiconductor plasma. Considering that the third order optical susceptibility χᶟ arising from the nonlinear wave interaction and using couple mode theory an analytical investigation of two species with ion-implantation has been presented. We have studied the threshold (E0th) and gain characteristics (α) with number density (n0) and wave vector (k) respectively. It can be seen that, in the case of GaAs shows a favourable enhancement in steady-state as well as the gain coefficient of the generated acoustic mode.
Keywords	Two-species ion-implanted plasma, Semiconductor plasma, Wave interaction, Ion implantation, Plasma waves, Electrostatic waves etc.
Field	Physics
Published In	Volume 6, Issue 6, November-December 2024
Published On	2024-11-18
Cite This	Wave Interaction in Two Species Ion-implanted Semi-conductor Plasma - Dr. C. S. Sharma, Dr. Nishchhal Yadav, Dr. K. Jain - IJFMR Volume 6, Issue 6, November-December 2024. DOI 10.36948/ijfmr.2024.v06i06.30840
DOI	https://doi.org/10.36948/ijfmr.2024.v06i06.30840
Short DOI	https://doi.org/g8rdzd

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