International Journal For Multidisciplinary Research

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Subthreshold Conduction in MOS Transistors

Author(s) Tarun Parmar
Country United States
Abstract Analytical models are reviewed in this paper which accounts for drain current in subthreshold region of operation of MOS transistor. Standard modeling approaches are discussed in the form of long-channel and short channel. The comparison of the theoretical models is discussed with experimental models [1, 2]. The drain current dependence on gate bias is reviewed as subthreshold slope. Tunnel transistors having subthreshold swing less than the conventional limit are discussed.
Keywords Subthreshold Conduction, Subthreshold Slope, Subthreshold Swing, Interband Tunnel Transistors.
Field Engineering
Published In Volume 1, Issue 1, July-August 2019
Published On 2019-07-10
DOI https://doi.org/10.36948/ijfmr.2019.v01i01.35937
Short DOI https://doi.org/g82wng
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